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SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1335
*
DESCRIPTION *With TO-220Fa package *Complement to type 2SD1855 *Low collector saturation voltage APPLICATIONS *For low frequency power amplifier applications
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -6 -4 30 150 -55~150 UNIT V V V A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-1mA; IB=0 IC=-50A; IE=0 IE=-50A; IC=0 IC=-3A ;IB=-0.3A IC=-3A ;IB=-0.3A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-5V IC=-0.5A; VCE=-5V f=1MHz ; VCB=-10V 60 MIN -60 -80 -6
2SB1335
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB
TYP.
MAX
UNIT V V V
-1.0 -1.5 -10 -10 320 12 100
V V A A
MHz pF
hFE Classifications D 60-120 E 100-200 F 160-320
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1335
Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm)
3

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